frequ e ncy multipliers - pa ssi v e - c hip 2 2 - 1 for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com hmc158 gaas mmic passive frequency doubler chip, 1.3 - 4.0 ghz input v06.0711 general description features functional diagram c onversion loss: 15 db fo, 3fo, 4fo isolation: 40 db input drive level: 10 to 20 dbm die size: 1.0 x 1.15 x 0.18 mm electrical specifcations, t a = +25 c, as a function of drive level typical applications the hm c 158 is suitable for: ? wireless local loop ? lmds, vsat, and point-to-point radios ? unii & hiperlan ? test equipment the hmc158 is a miniature frequency doubler in a mmi c die. suppression of undesired fundamental and higher order harmonics is 40 db typical with respect to input signal level. the doubler uses the same diode/balun technology used in hittite mmic mixers, features small size and requires no dc bias. input = +10 dbm input = +15 dbm input = +20 dbm parameter min. typ. max. min. typ. max. min. typ. max. units frequency range, input 1.7 - 4.0 1.7 - 3.5 1.3 - 4.0 ghz frequency range, output 3.4 - 8.0 3.4 - 7.0 2.6 - 8.0 ghz c onversion loss 18 22 15 18 15 18 db fo isolation (with respect to input level) 37 45 db 3fo isolation (with respect to input level) 40 50 db 4fo isolation (with respect to input level) 32 40 db
frequ e ncy multipliers - pa ssi v e - c hip 2 2 - 2 for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com conversion gain (db) conversion gain vs. drive level isolation @ +15 dbm drive level* input return loss vs. drive level output return loss vs. drive level *with respect to input level hmc158 v06.0711 gaas mmic passive frequency dubler chip, 1.3 - 4.0 ghz input absolute maximum ratings input drive +27 dbm storage temperature -65 to +150 c operating temperature -55 to +85 c esd sensitivity (hbm) c lass 1 a electrostatic sensitive device observe handling precautions
frequ e ncy multipliers - pa ssi v e - c hip 2 2 - 3 for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com outline drawing notes: 1. three pads on each corner must be bonded to ground (12 total). 2. all dimensions in inches [millimeters] 3. all tolerances are 0.001 [0.025] 4. die thickness is 0.007 [0.178] 5. bond pads are 0.004 [0.100] square 6. equally spaced at 0.006 [0.150] centers 7. backside metallization: none 8. bond pad metallization: gold die packaging information [1] standard a lternate [2] wp-2 (waffle pack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] reference this suffix only when ordering alternate die packaging. hmc158 v06.0711 gaas mmic passive frequency doubler chip, 1.3 - 4.0 ghz input pad n umber function description interface schematic 1 rfi n pad is dc coupled and matched to 50 ohms. 2 rfout pad is dc coupled and matched to 50 ohms. die bottom g n d d c / rf ground pad description
frequ e ncy multipliers - pa ssi v e - c hip 2 2 - 4 for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com hmc158 v06.0711 gaas mmic passive frequency doubler chip, 1.3 - 4.0 ghz input handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd protective containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against esd strikes. transients : suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fngers. mounting epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fllet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 1.0 diameter pure gold wire. thermosonic wirebonding with a nominal stage temperature of 150 c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package. rf bonds should be as short as possible.
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